FFSM0665A
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 20 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- This Device is Pb- Free, Halogen Free/BFR Free and Ro HS pliant
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
DATA SHEET .onsemi.
Pin1
4 321
PQFN 8y8, 2P (Power88)
CASE 483AP
5. Cathode 3, 4. Anode Schottky Diode
MARKING DIAGRAM
AYWWKK FFSM 0665A
A YWW KK...
